Numerical simulations of carrier-selective contact silicon solar cells: Role of carrier-selective layers electronic properties

نویسندگان

چکیده

Ag/ITO/MoOx/n-Si/LiFx/Al carrier-selective contact (CSC) solar cell structures are modelled and numerically simulated based on the experimental data using an industrial quality base silicon wafer by Sentaurus TCAD software. The role of (1) electron-selective lithium fluoride (LiFx) layer its thickness, (2) hole-selective molybdenum oxide (MoOx) work function variation, (3) front (MoOx/n-Si) surface passivation interlayer explored device performance. LiFx at rear side is led to substantial enhancement in photocurrent providing electrical barrier minority carriers (holes) a slight improvement open-circuit voltage, but thickness sensitive efficient extraction majority (electrons). MoOx needs be engineered for inducing strong inversion with better built-in potential MoOx/n-Si junction achieve high voltage from cell. A thin SiOx has significantly enhanced device’s minimizing carrier recombination interface.

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ژورنال

عنوان ژورنال: Journal of Computational Electronics

سال: 2021

ISSN: ['1572-8137', '1569-8025']

DOI: https://doi.org/10.1007/s10825-021-01750-3